An STM study of current-induced step bunching on Si(111)

Surface Science

Volumn 356, Issue 1-3, 1996, Pages 101-111

  Yang, Y N ^a   Fu, Elain S ^a   Williams, Ellen D ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Diffusion and migration; Models of non equilibrium phenomena; Scanning tunneling microscopy; Semiconducting surfaces; Silicon; Stepped single crystal surfaces; Surface structure, morphology, roughness

Indexed keywords

ANISOTROPY; ANNEALING; DIFFUSION; ELECTROMIGRATION; MATHEMATICAL MODELS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES;

CURRENT INDUCED STEP BUNCHING; NON EQUILIBRIUM PHENOMENA; STEPPED SINGLE CRYSTAL SURFACES; TERRACE SIZES;

SURFACE PHENOMENA;

EID: 0030172354     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00033-7     Document Type: Article

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