Unified treatment of current-induced instabilities on Si surfaces [9]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-4

  Zhao, Tong ^a   Weeks, John D ^a   Kandel, Daniel ^b,c  

^a Bldg 142   (United States)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; CALCULATION; ELECTRIC CURRENT; MODEL; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; MOLECULAR PHYSICS;

EID: 11344250293     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.161303     Document Type: Article

References (20)

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12. Phase field models can provide a more rigorous treatment of a diffuse step region, but we believe the two-region model captures several essential features in a very simple way. See, e.g., O. Pierre-Louis, Phys. Rev. E 68, 021604 (2003). Recently, Pierre-Louis and Metios (unpublished) have used negative permeability coefficients to analyze a growth-induced instability on Si(111).
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