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Surface Science

Volumn 416, Issue 1-2, 1998, Pages 200-213

New type of step bunching instability at vicinal surfaces in crystal evaporation affected by electromigration

(1) Stoyanov, S a,b

a INSTITUTE OF PHYSICAL CHEMISTRY (Bulgaria)

b NATL INST FOR ADV INTERDISC RES (Japan)

Author keywords

Electromigration; Silicon; Step bunching instability; Step step interaction; Surface; Surface diffusion

Indexed keywords

CRYSTALS; DIFFUSION; EVAPORATION; MATHEMATICAL MODELS; REACTION KINETICS; SURFACE PROPERTIES;

CRYSTAL EVAPORATION; SURFACE DIFFUSION;

ELECTROMIGRATION;

EID: 0032181692 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00582-2 Document Type: Article

Times cited : (55)

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