Excitonic transitions in β-FeSi 2 epitaxial films and single crystals

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2441-2447

  Birdwell, A G ^a   Shaffner, T J ^a   Chandler Horowitz, D ^a   Buh, G H ^a   Rebien, M ^b   Henrion, W ^b   Stauss P ^b   Behr, G ^c   Malikova, L ^d   Pollak, F H ^d   Littler, C L ^e   Glosser, R ^f   Collins, S ^f  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b HAHN MEITNER INSTITUT   (Germany)

^c IFW DRESDEN   (Germany)

^d CITY UNIVERSITY OF NEW YORK   (United States)

^e UNIVERSITY OF NORTH TEXAS   (United States)

^f UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREE EXCITONS; PHOTOREFLECTANCE SPECTRA;

ABSORPTION SPECTROSCOPY; BINDING ENERGY; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; EPITAXIAL GROWTH; EXCITONS; GROUND STATE; IRON COMPOUNDS; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; METALLIC FILMS; PHOTOLUMINESCENCE; RESONANCE; THIN FILMS;

SINGLE CRYSTALS;

EID: 12144286203     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643778     Document Type: Article

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