Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 252-255

  Katsumata, Hiroshi ^a,b   Makita, Yunosuke ^b   Kobayashi, Naoto ^b   Hasegawa, Masataka ^b   Shibata, Hajime ^b   Uekusa, Shin Ichiro ^a  

^a MEIJI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Ion implantation; Optical properties; Silicon; Suicides

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ENERGY GAP; ION BEAMS; ION IMPLANTATION; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

DEFECT RELATED OPTICAL ABSORPTION BAND; OPTICAL ABSORPTION MEASUREMENTS; OPTICAL APPLICATIONS; OPTICAL TRANSITION; PHOTOLUMINESCENCE SPECTRA; SILICIDES; TWO STEP ANNEALING;

IRON COMPOUNDS;

EID: 0030219232     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08645-2     Document Type: Article

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