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Physical Review Letters

Volumn 86, Issue 26 I, 2001, Pages 6006-6009

Luminescent FeSi2 crystal structures induced by heteroepitaxial stress on Si(111)

(2) Yamaguchi, K a Mizushima, K a

a MITSUBISHI MATERIALS CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; LIGHT EMISSION; LOW TEMPERATURE PROPERTIES; LUMINESCENCE; PROBABILITY; SILICON; STRESSES;

DIRECT GAP BAND STRUCTURE; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; GENERALIZED GRADIENT APPROXIMATION; HETEROEPITAXIAL SYSTEM; LOCAL DENSITY APPROXIMATION;

IRON COMPOUNDS;

EID: 18244428856 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.6006 Document Type: Article

Times cited : (87)

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