Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

Journal of Applied Physics

Volumn 94, Issue 6, 2003, Pages 4096-4101

  Vasallo, B G ^a   Mateos, J ^a   Pardo, D ^a   Gonzalez T ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON MOBILITY TRANSISTORS;

TRANSISTORS;

EID: 0141990512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1603955     Document Type: Article

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