Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers

Optical and Quantum Electronics

Volumn 36, Issue 4, 2004, Pages 331-347

  Sarzala R P ^a   Mendla, P ^a   Wasiak, M ^a   Mackowiak P ^a   Bugajski, M ^b   Nakwaski, W ^a,c  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

1.3 m fibre communication; 1.3 m VCSELs; Quantum dot lasers; Threshold laser simulation

Indexed keywords

COMPUTER SIMULATION; MICROCOMPUTERS; OPTICAL FIBERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

CONTINUOUS WAVE LASING THRESHOLD; HIGHER ORDER TRANSVERSE MODE; OPTICAL GAIN DISTRIBUTION; TRANSVERSE MODE OPERATION; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 11144354341     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:OQEL.0000019967.68715.3d     Document Type: Article

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