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Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 78-84

Structural and optical properties of InAs/GaAs quantum dots emitting at 1. 5 μm

(5) Gong, Z a Fang, Z D a Miao, Z H a Niu, Z C a Feng, S L a

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

A1. 1.5 m light emission; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

DISLOCATION DENSITY; EMISSION ENERGY; EMISSION WAVELENGTH;

ATOMIC FORCE MICROSCOPY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMICS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 11144272028 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.005 Document Type: Article

Times cited : (8)

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