Effect of growth interruption on the optical properties of InAs/GaAs quantum dots

Solid State Communications

Volumn 109, Issue 10, 1999, Pages 649-653

  Lu, Z D ^a   Xu, J Z ^a   Zheng, B Z ^a   Xu, Z Y ^a   Ge, W K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A. Semiconductors; D. Optical properties; E. Luminescence

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

GROWTH INTERRUPTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033077747     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00011-3     Document Type: Article

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