Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 589-591

  Kim, Jinbong ^a,b   Lee, Kwyro ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b MICROS Research Center   (South Korea)

Author keywords

CMOS antifuse; CMOS OTP; Gate oxide breakdown; OTP ROM

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); OXIDES; ROM; SEMICONDUCTOR DEVICE MANUFACTURE;

GATE OXIDE ANTIFUSE; GATE OXIDE BREAKDOWN;

MOSFET DEVICES;

EID: 0141563593     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815429     Document Type: Letter

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