Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 495-497

  Liu, Mu Yi ^a   Chang, Yao Wen ^a   Zous, Nian Ki ^a   Yang, Ichen ^a   Lu, Tao Cheng ^a   Wang, Tahui ^b   Ting, Wenchi ^a   Ku, Joseph ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CELLULAR ARRAYS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDES; THRESHOLD VOLTAGE;

CHANNEL HOT ELECTRON PROGRAM; EEPROM; FOWLER-NORDHEIM PROGRAMMING; NITRIDE BASED TRAPPING STORAGE; READ CURRENT; TRAPPED CHARGE PROFILE;

FLASH MEMORY;

EID: 3343017574     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.830275     Document Type: Article

References (9)

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