Retention loss characteristics of localized charge-trapping devices

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 527-530

  Lusky, Eli ^a   Shacham Diamand, Yossi ^b   Shappir, Assaf ^a   Bloom, Ilan ^a   Cohen, Guy ^a   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84870757706     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315384     Document Type: Conference Paper

References (7)

1. B. Eitan et al., EDL-21 (11), pp.543-545, 2000.
2. E. Lusky et al., EDL-23(9) pp. 556-558, 2002.
3. W. Tsai et ai., IEDM pp. 556-558, 2001.
4. E. Lusky et al., EDL-22(11) pp. 556-558, 2001.
5. E. Lusky etal., TEDS 1(3)pp. 444-451, 2004
6. A. Shappir et a)., Micro. Elec. Eng., to be published (available online, March 2004).
7. M. Janai, IRPSProc, pp. 502-505, 2003.