60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn 1, Issue 2, 2002, Pages 69-76

  Simoen, Eddy ^a   Hermans, Jan ^a   Mercha, Abdelkarim ^a,c   Vereecken, Wim ^b   Vermoere, Carl ^b   Claeys, Cor ^a,b   Augendre, Emmanuel ^a   Badenes, Gonçal ^a   Mohammadzadeh, Ali ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITÉ DE CAEN   (France)

^d EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

MOSFETs; Protons; Radiation effects; Radiation hardening

Indexed keywords

DIELECTRIC MATERIALS; LEAKAGE CURRENTS; PROTON IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHARGE SEPARATION TECHNIQUE; GATE-INDUCED DRAIN LEAKAGE CURRENT; STANDARD THERMAL GATE OXIDE;

MOSFET DEVICES;

EID: 0036991702     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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