Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1158-1162

  Gilmer, D ^a   Hobbs, C ^a   Hegde, R ^a   La, L ^a   Adetutu, O ^a   Conner, J ^a   Tiner, M ^a   Prabhu, L ^a   Bagchi, S ^a   Tobin, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; RAPID THERMAL ANNEALING; TANTALUM COMPOUNDS; TITANIUM DIOXIDE; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

TANTALUM PENTOXIDE;

GATES (TRANSISTOR);

EID: 0034227580     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582317     Document Type: Article

References (17)

1. S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, IBM J. Res. Dev. 43, 383 (1999).
2. A. Y. Mao, K. A. Son, J. M. White, D. L. Kwong, D. A. Roberts, and R. N. Vrtis, J. Vac. Sci. Technol. A 17, 954 (1999).
3. J. P. Chang, R. L. Opila, G. B. Alers, M. L. Steigerwald, H. C. Lu, E. Garfunkel, and T. Gustafsson, Solid State Technol. 42, 43 (1999).
4. C. Y. Ting, M. Wittmer, S. S. Iyer, and S. M. Brodsky, J. Electrochem. Soc. 131, 2934 (1984).
5. B. H. Lee, Y. Jeon, K. Zawadzki, W.-J. Qi, and J. Lee, Appl. Phys. Lett. 74, 3143 (1999).
6. C. Carney and D. Durham, J. Vac. Sci. Technol. A 17, 2850 (1999).
7. B. Claflin and G. Lucovsky, J. Vac. Sci. Technol. B 16, 2154 (1998).
8. C. Hobbs et al., 1999 Symposium on VLSI Technology, Digest of Technical Papers (IEEE Cat. No. 99CH36325), pp. 133-134.
9. B. Maiti et al., International Electron Devices Meeting 1998, Technical Digest (Cat. No. 98CH36217), pp. 781-784.
10. H.-J. Lee, R. Sinclair, M.-B. Lee, and H.-D. Lee, J. Appl. Phys. 83, 139 (1998).
11. I. Barin, Thermodynamical Properties of Inorganic Substances (Springer, New York, 1977)
12. N. Schonberg, Acta Chem. Scand. 8, 213 (1954).
13. H. Yokokawa, Key Eng. Mater. 153-154, 37 (1998).
14. H. Sawada and K. Kawakami, J. Appl. Phys. 86, 956 (1999).
15. H. Miura, S. Ikeda, and N. Suzuki, International Electron Devices Meeting, Technical Digest (Cat. No. 96CH35961), pp. 743-746.
16. Y. Momiyama, H. Minakata, and T. Sugii, 1997 Symposium on VLSI Technology, Digest of Technical Papers (IEEE Cat. No. 97CH36114), pp. 135-136.
17. T. Devoivre, C. Papadas, and M. Setton, 1999 Symposium on VLSI Technology, Digest of Technical Papers (IEEE Cat. No. 99CH36325), pp. 131-132.