-
1
-
-
0000889296
-
"A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths"
-
C. J. Gorter, "A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths," Phys., vol. 17, pp. 777-780, 1951.
-
(1951)
Phys.
, vol.17
, pp. 777-780
-
-
Gorter, C.J.1
-
2
-
-
0031117154
-
"Aspects of systems and circuits for nanoelectronics"
-
Apr
-
K. F. Goser, C. Pacha, A. Kanstein, and M. L. Rossmann, "Aspects of systems and circuits for nanoelectronics," Proc. IEEE, vol. 85, pp. 558-573, Apr. 1997.
-
(1997)
Proc. IEEE
, vol.85
, pp. 558-573
-
-
Goser, K.F.1
Pacha, C.2
Kanstein, A.3
Rossmann, M.L.4
-
3
-
-
0033116184
-
"Single-electron devices and their applications"
-
Apr
-
K. K. Likharev, "Single-electron devices and their applications," Proc. IEEE, vol. 87, pp. 606-632, Apr. 1999.
-
(1999)
Proc. IEEE
, vol.87
, pp. 606-632
-
-
Likharev, K.K.1
-
4
-
-
0003975428
-
-
Ed., Luxembourg, Germany: Office for official publications of the European Communities, Nov
-
R. Compano, Ed., Technology Roadmap for Nanoelectronics. Luxembourg, Germany: Office for official publications of the European Communities, Nov. 2000.
-
(2000)
Technology Roadmap for Nanoelectronics
-
-
Compano, R.1
-
5
-
-
0000960799
-
"Possible performance of capacitively coupled single electron transistors in digital circuits"
-
A. N. Korotkov, R. H. Chen, and K. K. Likharev, "Possible performance of capacitively coupled single electron transistors in digital circuits," J. Appl. Phys., vol. 78, pp. 2520-2530, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 2520-2530
-
-
Korotkov, A.N.1
Chen, R.H.2
Likharev, K.K.3
-
6
-
-
0031655854
-
"Silicon single-electron memory structure"
-
N. J. Stone and H. Ahmed, "Silicon single-electron memory structure," Microelectron. Eng., vol. 41/42, pp. 511-514, 1998.
-
(1998)
Microelectron. Eng.
, vol.41-42
, pp. 511-514
-
-
Stone, N.J.1
Ahmed, H.2
-
7
-
-
0031677761
-
"A stochastic associative memory using single-electron tunnelling devices"
-
M. Sean, T. Morie, M. Nagata, and A. Iwata, "A stochastic associative memory using single-electron tunnelling devices," IECE Trans. Electron., vol. E81-C, pp. 30-35, 1998.
-
(1998)
IECE Trans. Electron.
, vol.E81-C
, pp. 30-35
-
-
Sean, M.1
Morie, T.2
Nagata, M.3
Iwata, A.4
-
8
-
-
0032203875
-
"A comparative study of single electron memories"
-
Nov
-
C. Wasshuber, H. Kosina, and S. Selberherr, "A comparative study of single electron memories," IEEE Trans. Electron Devices, vol. 45, pp. 2365-2371, Nov. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 2365-2371
-
-
Wasshuber, C.1
Kosina, H.2
Selberherr, S.3
-
9
-
-
0033116234
-
"Single-electron memory for giga-to-tera bit storage"
-
Apr
-
K. Yano, T. Ishii, T. Sano, T. Mine, F. Murai, T. Hashimoto, T. Kobayashi, T. Kure, and K. Seki, "Single-electron memory for giga-to-tera bit storage," Proc. IEEE, vol. 87, pp. 633-651, Apr. 1999.
-
(1999)
Proc. IEEE
, vol.87
, pp. 633-651
-
-
Yano, K.1
Ishii, T.2
Sano, T.3
Mine, T.4
Murai, F.5
Hashimoto, T.6
Kobayashi, T.7
Kure, T.8
Seki, K.9
-
10
-
-
0032687552
-
"Double-island single-electron devices - A useful unit device for single-electron logic LSIs"
-
May
-
A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase, "Double-island single-electron devices - a useful unit device for single-electron logic LSIs," IEEE Trans. Electron Devices, vol. 46, pp. 954-959, May 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 954-959
-
-
Fujiwara, A.1
Takahashi, Y.2
Yamazaki, K.3
Namatsu, H.4
Nagase, M.5
Kurihara, K.6
Murase, K.7
-
11
-
-
0029252336
-
"Simple and stable single-electronics logic utilizing tunnel junction load"
-
H. Fukui, M. Fujishima, and K. Hoh, "Simple and stable single-electronics logic utilizing tunnel junction load," Jpn. J. Appl. Phys., vol. 34, pp. 1345-1350, 1995.
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, pp. 1345-1350
-
-
Fukui, H.1
Fujishima, M.2
Hoh, K.3
-
12
-
-
0031674834
-
"Single-electron majority logic gates"
-
H. Iwamura, M. Akazawa, and Y. Amemiya, "Single-electron majority logic gates," IEICE Trans. Electron., vol. E81-C, pp. 42-49, 1998.
-
(1998)
IEICE Trans. Electron.
, vol.E81-C
, pp. 42-49
-
-
Iwamura, H.1
Akazawa, M.2
Amemiya, Y.3
-
13
-
-
0031177646
-
"Single-electron logic devices based on the binary decision diagram device"
-
July
-
N. Asahi, M. Akazawa, and Y. Amemiya, "Single-electron logic devices based on the binary decision diagram device," IEEE Trans. Electron Devices, vol. 44, pp. 1109-1116, July 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1109-1116
-
-
Asahi, N.1
Akazawa, M.2
Amemiya, Y.3
-
14
-
-
0033880157
-
"Single-electron OR gate"
-
I. Karafyllidis, "Single-electron OR gate," Electron. Lett., vol. 36, pp. 407-408, 2000.
-
(2000)
Electron. Lett.
, vol.36
, pp. 407-408
-
-
Karafyllidis, I.1
-
17
-
-
0037810817
-
"Design and simulation of a single-electron full-adder"
-
G. T. Zardalidis and I. Karafyllidis, "Design and simulation of a single-electron full-adder," Proc. IEE Circuits, Devices, Syst., vol. 150, pp. 173-177, 2003.
-
(2003)
Proc. IEE Circuits, Devices, Syst.
, vol.150
, pp. 173-177
-
-
Zardalidis, G.T.1
Karafyllidis, I.2
-
18
-
-
0036746044
-
"Design and simulation of a single-electron random-access memory array"
-
Sept
-
I. Karafyllidis, "Design and simulation of a single-electron random-access memory array," IEEE Trans. Circuits Syst. I, vol. 49, pp. 1370-1375, Sept. 2002.
-
(2002)
IEEE Trans. Circuits Syst. I
, vol.49
, pp. 1370-1375
-
-
Karafyllidis, I.1
-
19
-
-
0002412043
-
"Possible applications of the single charge tunnelling"
-
H. Grabert and M. H. Devorter, Eds. New York: Plenum Press
-
D. V. Averin and K. K. Likharev, "Possible applications of the single charge tunnelling," in Single Charge Tunnelling, H. Grabert and M. H. Devorter, Eds. New York: Plenum Press, 1992, pp. 311-332.
-
(1992)
Single Charge Tunnelling
, pp. 311-332
-
-
Averin, D.V.1
Likharev, K.K.2
-
20
-
-
0032256560
-
"Determination of lowest energy state in single-electron circuits"
-
I. Karafyllidis, "Determination of lowest energy state in single-electron circuits," Electron. Lett., vol. 34, pp. 2401-2403, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 2401-2403
-
-
Karafyllidis, I.1
-
21
-
-
0000831872
-
"A numerical study of the dynamics and statistics of single-electron systems"
-
L. R. C. Fonseca, A. N. Korotkov, K. K. Likharev, and A. A. Odintsov, "A numerical study of the dynamics and statistics of single-electron systems," J. Appl. Phys., vol. 78, pp. 3238-3251, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 3238-3251
-
-
Fonseca, L.R.C.1
Korotkov, A.N.2
Likharev, K.K.3
Odintsov, A.A.4
-
22
-
-
0001006105
-
"Single-electron transistor logic"
-
R. H. Chen, A. N. Korotkov, and K. K. Likharev, "Single-electron transistor logic," Appl. Phys. Lett., vol. 68, pp. 1954-1956, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1954-1956
-
-
Chen, R.H.1
Korotkov, A.N.2
Likharev, K.K.3
-
23
-
-
0032631211
-
"A simulator for single-electron devices and circuits based on simulated annealing"
-
I. Karafyllidis, "A simulator for single-electron devices and circuits based on simulated annealing," Superlattices and Microstructures, vol. 25, pp. 567-572, 1999.
-
(1999)
Superlattices and Microstructures
, vol.25
, pp. 567-572
-
-
Karafyllidis, I.1
-
24
-
-
0031224423
-
"SIMON - A simulator for single-electron tunnel devices andcircuits"
-
C. Wasshuber, H. Kosina, and S. Selberherr, "SIMON - a simulator for single-electron tunnel devices andcircuits," IEEE Trans. Computer-Aided Design, vol. 16, pp. 937-944, 1997.
-
(1997)
IEEE Trans. Computer-Aided Design
, vol.16
, pp. 937-944
-
-
Wasshuber, C.1
Kosina, H.2
Selberherr, S.3
|