Simulator for single-electron tunnel devices and circuits based on simulated annealing

Superlattices and Microstructures

Volumn 25, Issue 4, 1999, Pages 567-572

  Karafyllidis, Ioannis ^a  

^a DEMOCRITUS UNIVERSITY OF THRACE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; SIMULATED ANNEALING;

SINGLE-ELECTRON TUNNEL DEVICES;

TUNNEL JUNCTIONS;

EID: 0032631211     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0681     Document Type: Article

References (15)

1. Goldhaber-Gordon D., Montemerlo M. S., Love J. C., Opiteck G. J., Ellenbogen J. C. Proc. IEEE. 85:1997;521.
2. Mohan S., Sun J. P., Mazumder P., Haddad G. I. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 14:1995;653.
3. Fountain T. J., Duff M. J. B., Crawley D. G., Tomlinson C. D., Moffat C. D. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 6:1998;31.
4. Fonseca L. R. C., Korotkov A. N., Likharev K. K., Odintsov A. A. J. Appl. Phys. 78:1995;3238.
5. Devoret M. H., Grabert H. Grabert H., Devoret M. H. Single Charge Tunneling-Coulomb Blockade Phenomena in Nanostructures. 1992;1-19 Plenum Press, New York.
6. Tucker J. R. J. Appl. Phys. 72:1992;4399.
7. Fukui H., Fujishima M., Hoh K. Japan. J. Appl. Phys. 34:1995;1345.
8. Chen R. H., Korotkov A. N., Likharev K. K. Appl. Phys. Lett. 68:1996;1945.
9. Wasshuber C., Kosina H. Superlatt. Microstruct. 21:1997;37.
10. Wasshuber C., Kosina H., Selberherr S. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 16:1997;937.
11. Akazawa M., Amemiya Y., Shibata N. J. Appl. Phys. 82:1997;5176.
12. Lent C. S., Tougaw P. D., Porod W. Appl. Phys. Lett. 62:1993;714.
13. Lent C. S., Tougaw P. D. J. Appl. Phys. 74:1993;6227.
14. Sait S. M., Youssef H. VLSI Physical Design Automation. 1995;IEEE Press, New York.
15. Aarts E., Korst J. Simulated Annealing and Boltzmann Machines. 1989;Wiley, Chichester.