A comparative study of single-electron memories

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2365-2371

  Wasshuber, Christoph ^b   Kosina, Hans ^a,b   Selberherr, Siegfried ^a,b  

^a IEEE

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Coulomb blockade; Memory; Quantum dot; Single electron; Tunneling

Indexed keywords

ELECTRON TUNNELING; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

SINGLE ELECTRON MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 0032203875     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726659     Document Type: Article

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