A reliability study of barrier-metal-clad copper interconnects with self-aligned metallic caps

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2129-2135

  Saito, Tatsuyuki ^a   Ashihara, Hiroshi ^a   Ishikawa, Kensuke ^a   Miyauchi, Masanori ^b   Yamada, Yohei ^a   Nakano, Hiroshi ^b  

^a Micro Device Division   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Chemical vapor deposition (CVD); Copper; Electroless deposition; Electromigration; Interconnect; Selective growth; Selectivity loss; Self align; Stressmigration; Time dependent dielectric breakdown (TDDB); Tungsten

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTROLESS PLATING; ELECTROMIGRATION; LEAKAGE CURRENTS; TUNGSTEN;

COPPER INTERCONNECTS; SELECTIVE GROWTH; SELECTIVITY LOSS; STRESS MIGRATION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

LSI CIRCUITS;

EID: 10644281275     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838512     Document Type: Article

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