A comparison of reliability aspects of a 0.35 μm and 0.18 μm process copper metallization

Advanced Metallization Conference (AMC)

Volumn , Issue , 2000, Pages 415-423

  Von Glasow, A ^a   Fischer, A H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTROMIGRATION; METALLIZING; REACTIVE ION ETCHING;

STRESSVOIDING (SV);

COPPER;

EID: 0034460889     PISSN: 10480854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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9. On the log-normal distribution of electromigration lifetimes
10. Electromigration in thin aluminum films on titanium-nitride
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13. Reliability considerations for copper metallizations in ULSI circuits