A feature scale model for chemical mechanical planarization of damascene structures

Thin Solid Films

Volumn 449, Issue 1-2, 2004, Pages 192-206

  Saxena, Ravi ^a   Thakurta, Dipto G ^a,b   Gutmann, Ronald J ^a   Gill, William N ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Chemical mechanical planarization; Computer simulation; Dishing and erosion; Metallization; Pad properties; Planarization; Tribology

Indexed keywords

ABRASIVES; COMPUTER SIMULATION; COPPER OXIDES; ELECTRIC CONTACTS; EROSION; HYDRODYNAMICS; PRESSURE MEASUREMENT; SILICON WAFERS; STRESS ANALYSIS; SUBSTRATES; TRIBOLOGY;

CHEMICAL MECHANICAL PLANARIZATION; DAMASCENE STRUCTURES; DISHING AND EROSION; PAD PROPERTIES;

CHEMICAL MECHANICAL POLISHING;

EID: 1042269664     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.078     Document Type: Article

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