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Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1867-1869

Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study

(4) Stormer J a Triftshauser W a Hozhabri, N b Alavi, K b

a BUNDESWEHR UNIVERSITY MUNICH (Germany)

b The University of Texas at Arlington (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011780107 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117460 Document Type: Article

Times cited : (22)

References (15)

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