Gallium arsenide deep-level optical emitter for fibre optics

Nature Materials

Volumn 2, Issue 6, 2003, Pages 375-378

  Pan, Janet L ^a   Mcmanis, Joseph E ^a   Osadchy, Thomas ^a   Grober, Louise ^a   Woodall, Jerry M ^a   Kindlmann, Peter J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; ENERGY GAP; FIBER OPTICS; INTEGRATED CIRCUITS; LIGHT ABSORPTION; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE;

CONDUCTION BAND; DEEP-LEVEL ENERGY BAND; DEEP-LEVEL TRANSITION; OPTICAL EMITTER; VALENCE BAND;

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRONICS; ENERGY TRANSFER; EQUIPMENT DESIGN; FIBER OPTICS; INSTRUMENTATION; LASER; MATERIALS TESTING; METHODOLOGY; OPTICS; PHOTOCHEMISTRY; SEMICONDUCTOR;

ARSENICALS; ELECTROCHEMISTRY; ELECTRONICS; ENERGY TRANSFER; EQUIPMENT DESIGN; FIBER OPTICS; GALLIUM; LASERS; MATERIALS TESTING; OPTICS; PHOTOCHEMISTRY; SEMICONDUCTORS;

EID: 0042208679     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat887     Document Type: Letter

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