Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation

IEICE Transactions on Electronics

Volumn E87-C, Issue 1, 2004, Pages 30-36

  Manabe, Kenzo ^a   Endo, Kazuhiko ^a   Kamiyama, Satoshi ^a   Iwamoto, Toshiyuki ^a   Ogura, Takashi ^a   Ikarashi, Nobuyuki ^a   Yamamoto, Toyoji ^a   Tatsumi, Toru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Aluminum oxide; Fixed charge; High gate dielectric; MOSFET performance; Plasma nitridation

Indexed keywords

ELECTRIC CHARGE; GATES (TRANSISTOR); HYSTERESIS; LEAKAGE CURRENTS; METALLIC FILMS; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTOR DOPING; SUBSTRATES; THRESHOLD VOLTAGE; CHARACTERIZATION; GATE DIELECTRICS; NITRIDATION; PLASMAS;

FIXED CHARGES; HIGH-K GATE DIELECTRICS; MOSFET PERFORMANCE; PLASMA NITRIDATION; FIXED CHARGE; INTERFACIAL TRAP DENSITY; SUBSTRATE TEMPERATURE;

ALUMINA;

EID: 0842331837     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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