Quantitative understanding of mobility degradation due to remote charge scattering

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 116-118

  Saito, S ^a   Torii, K ^a   Hiratani, M ^a   Onai, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GATES (TRANSISTOR); RECONFIGURABLE HARDWARE;

CHANNEL CARRIERS; DIRECT TUNNELING CURRENTS; EFFECTIVE MOBILITIES; INVERSION CHARGE; MOBILITY DEGRADATION; REMOTE CHARGE SCATTERING; SCALING LIMITS; ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 0346892483     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967559     Document Type: Conference Paper

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