Fabrication of highly aligned nano-hole/trench structures by atomic force microscopy tip-induced oxidation and atomic hydrogen cleaning

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 265-270

  Kim, Jong Su ^a   Kawabe, Mitsuo ^a   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Atomic force oxidation; A1. Atomic hydrogen etching; A1. Nano hole trench structures; A3. Molecular beam epitaxy; B1. GaAs

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; ETCHING; HYDROGEN; MOLECULAR BEAM EPITAXY; OXIDATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

ATOMIC FORCE OXIDATION; ATOMIC HYDROGEN ETCHING; NANOHOLE/TRENCH STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0842286892     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.020     Document Type: Article

References (22)

1. Takamori A., Sugata S., Asakwa K., Miyauchi E., Hashimoto H. Jpn. J. Appl. Phys. 26:1987;L142.
2. Sugaya T., Kawabe M. Jpn. J. Appl. Phys. 30:1991;L402.
3. Akatsu T., Plössl A., Scholz R., Stenzel H., Gösele U. J. Appl. Phys. 90:2001;3856.
4. Razek N., Otte K., Chassé T., Hirsch D., Schindler A., Frost F., Rauschenbach B. J. Vac. Sci. Technol. A20:2002;1492.
5. G. Baldassarri H. v. H., M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, A. Forchel, Appl. Phys. Lett. 78 (2001) 3472.
6. Silvestre S., Constant E., Bernard-Loridant D., Sieber B. Appl. Phys. Lett. 76:2000;2731.
7. LaPierre R.R., Robinson B.J., Thompson D.A. J. Crystal Growth. 191:1998;319.
8. Le Ru E.C., Siverns P.D., Murray R. Appl. Phys. Lett. 77:2000;2446.
9. Burkard G., Loss D., DiVincenzo David P. Phys. Rev. B. 59:1999;2070.
10. Amlani I., Orlov A.O., Toth G., Bernstein G.H., Lent C.S., Snider G.L. Science. 284:1999;289.
11. Ishikawa T., Nishimura T., Kohmoto S., Asakawa K. Appl. Phys. Lett. 76:2000;167.
12. Kohmoto S., Nakamura H., Ishikawa T., Asakawa K. Appl. Phys. Lett. 75:1999;3488.
13. Huh C., Park S.-J. J. Vac. Sci. Technol. B18:2000;55.
14. Lazzarino M., Heun S., Ressel B., Prince K.C., Pingue P., Ascoli C. Appl. Phys. Lett. 81:2002;2842.
15. Sasa S., Ikeda T., Akahori M., Kajiuchi A., Inoue M. Jpn. J. Appl. Phys. 38:1999;1064.
16. Matsuzaki Y., Yuasa K., Shirakashi J., Chilla E.K., Yamada A., Konagai M. J. Crystal Growth. 201/202:1999;656.
17. Matsuzaki Y., Yamada A., Konagai M. J. Crystal Growth. 209:2000;509.
18. Ara M., Graaf H., Tada H. Appl. Phys. Lett. 80:2002;2565.
19. Songmuang R., Kiravittaya S., Schmidt Oliver G. Appl. Phys. Lett. 82:2003;2892.
20. Hyon C.K., Choi S.C., Song S.-H., Hwang S.W., Son M.H., Ahn D., Park Y.J., Kim E.K. Appl. Phys. Lett. 77:2000;2607.
21. Yamada M. Jpn. J. Appl. Phys. 35:1996;L651.
22. Dagata J.A., Inoue T., Itoh J., Matsumoto K., Yokoyama H. J. Appl. Phys. 84:1998;6891.