Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 656-659

  Matsuzaki, Yuichi ^a   Yuasa, Ken Ichiro ^a   Shirakashi, Jun Ichi ^b   Chilla, Eduard K ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; OXIDATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

INDIUM GALLIUM PHOSPHIDE;

ELECTRIC WIRE;

EID: 0032651008     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01443-2     Document Type: Article

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