Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 509-512

  Matsuzaki, Yuichi ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; WIRE;

ELECTRON BEAM INDUCED DEPOSITION; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE); NANOSCALE PATTERNING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034141047     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00607-7     Document Type: Article

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