Recent advances in GaAs devices for use at high temperatures

1998 High-Temperature Electronic Materials, Devices and Sensors Conference

Volumn 1998-February, Issue , 1998, Pages 106-116

  Wurfl, J ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTING GALLIUM;

HIGH TEMPERATURE; HIGH TEMPERATURE DEVICE; HIGH TEMPERATURE ELECTRONIC DEVICES; KEY ISSUES; LEAKAGE REDUCTION; MESFETS; REVIEW OF TECHNOLOGIES; STATE OF THE ART;

HIGH TEMPERATURE APPLICATIONS;

EID: 0142110984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HTEMDS.1998.730659     Document Type: Conference Paper

References (40)

1. S.M. Sze, "Physics of Semiconductor Devices", John Wiley&Sons, New York, (1981)
2. J. Wurfl, B. Janke, E. Nebauer, S. Thierbach, P. Wolter, "High Temperature MESFET based Integrated Circuits Operating up to 300C", IEDM Technical Digest (1996), pp. 219-222
3. J. Wurfl, H. L. Hartnagel, "Thermal Stability and Degradation Mechanisms of Ti-Pt-Au, Ti-Au and WSi2-Ti-Pt-Au Schottky Contacts on GaAs", 4th Int. Conf. Prevention, Detection and Failure Analysis, Bordeaux, France, Proceedings (1989), pp. 133-138
4. J. Wurfl, J. K. Singh, H. L. Hartnagel, "Reliability Aspects of Thermally Stable LaB6-Au Schottky Contacts to GaAs", IEEE Reliability Physics, 28th Annual Proc. (1990), pp. 87-93
5. J. R. Waldrop, R. W. Grant, "Metal Contacts to GaAs with 1 eV Schottky Barrier Height", Appl. Phys. Lett., Vol. 52, No. 21,(1988), pp. 1794-1796
6. A. Turiit, S. Tuzemen, M. Yildirim, B. Abay, M. Saglam, "Barrier Height Enhancement by Annealing Cr-Ni-Co Alloy Schottky Contacts on LEC GaAs", Solid-State Electronics, Vol. 35, No. 10, (1992), pp. 1423-1426
7. C. D. Wilson, A.G. O'Neil, "High Temperature Operation of GaAs Based FETs", Solid-State Electronics, Vol. 38, No. 2, (1995), pp. 339-343
8. T. Sands, "Compound Semiconductor Contact Metallurgy", Materials Science and Engineering, B1 (1989), pp. 289-312
9. J. Wurfl, E. Nebauer, U. Merkel, K. Vogel, V. Abrosi-mova: "Metallization Techniques for High Temperature GaAs Integrated Circuits", Proceeding 3rd International High Temperature Electronics Conference, Albuquerque, NM, (1996), pp. V15-V21
10. V. Abrosimova, E. Nebauer, P. Ressel, I. Urban, J. Wurfl, "Temperature Stable Pd-ln-GeAVSiN/Ti/Pt/Au Ohmic Contacts to GaAs", Inst. Phys. Conf. Ser., No. 155, (1997), pp. 613-616
11. K. Tanahashi, H. J. Takata, A. Otsuki, M. Murakami, "Thermally Stable Non-Gold Ohmic Contacts to n-Type GaAs.l.NiGe Contact Metal", J. Appl. Phys., Vol. 72, No. 9, (1992), pp. 4183-4190
12. K. Tanahashi, H. J. Takata, A. Otsuki, H. Inui, M. Murakami, "Thermally Stable Non-Gold Ohmic Contacts to n-Type GaAs.ll.NiSiW Contact Metal", J. Appl. Phys., Vol. 72, No. 9, (1992), pp. 4191-4196
13. N. Lustig, M. Murakami, M. Norcott, "Low Au Content Thermally Stable NiGe(Au)W Ohmic Contacts to n-Type QaAs", Appl. Phys. Lett, Vol. 58, No. 19, (1991), pp. 2093-2095
14. M. Murakami, W. H. Price, M. Norcott, P.-E. Hallali, "Thermally Stable Ohmic Contacts to n-Type GaAs. VII. Addition of Ge or Si to NilnW Ohmic Contacts", Appl. Phys., Vol. 68, No. 5, (1990), pp. 2468
15. C.-H. Jan, D. Swenson, Y. A. Chang, "Alloying of Ni/ln/Ni/n-GaAs Ohmic Contacts Induced by Ga-Ni-As Ternary Eutectic Reactions", J. Appl. Phys., Vol. 68, No. 12, (1990), pp. 6458-6462
16. U. Merkel, E. Nebauer and M. Mai, "Ohmic behavior of AuAA/SiN/(AuGeNi)-n-GaAs systems." Thin Solid Films Vol. 217, (1992), pp. 108-112
17. J. Wurfl, K. Fricke, H. L. Hartnagel, "Non Alloyed, High Temperature Stable Ohmic Contacs to GaAs Based on LaB6 Diffusion Barriers" Inst. Phys. Conf. Ser. No. 112, (1990), pp. 239-244
18. J. Wurfl, B. Janke, K.H. Rooch, S. Thierbach, "Technology of GaAs-based MMICs for high temperature applications." Proceedings 22nd International Symposium on Compound Semiconductors (ISCS), Cheju Island, Korea, Inst. Phys. Conf. Ser. No 145, (1995), pp. 615-620
19. C.J. Uchibori, Y. Ohtani, T. Oku, N. Ono, M. Murakami, "lnxGai-xAs Ohmic Contacts to n-type GaAs with a Tungsten Nitride Barrier", Journal of Electronic Materials, Vol. 26, No. 4, (1997), pp. 410-414
20. T. Oka, K. Ouchi, H. Uchiyama, T. Taniguchi, K. Mochizuki, T. Nakamura, "High-Speed InGaP/GaAs Heterojunction Bipolar Transistors with Buried Si02 Using WSi as th Base Electrode", IEEE Eelectr. Dev. Lett, Vol 18, No. 4, (1997), pp. 154-156
21. E. Nebauer, U, Merkel, J. Wurfl, "Structure and Stability Studies on W, WSi, WSiN-GaAs Systems by XRD", Semicond. Sci. Technol. 12, (1997), pp. 1072-1078
22. E. Kolawa, M.A. Nicolet, "Amorphous Ta-Si-N Thin-Film Alloys as Diffusion Barrier in Al/Si Metallizations, J. Vac. Sci. Technol., A8, (1990), pp. 3606
23. H. Kattelus, M.A. Nicolet, "Diffusion Barriers in Semiconductor Contact Metallization", in Diffusion Phenomena in Thin Films and Microelectronic Materials, D. Gupta,and P.S. Ho, Eds., Noyes Public (Park Ridge, N.J.), (1988), pp. 432-498
24. H. Muessig, C. Woelk, H. Brugger, A. Forchel, "Selective High Temperature Stable Oxygen Implantation and MBE-Overgrowth Technique", Inst. Phys. Conf. Ser. No 136, (1993), pp. 529-534
25. K. Fricke, H.L. Hartnagel, R. Schiitz, G. Schweeger, J. Wurfl, "A New GaAs Technology for Stable FETs at 300C", IEEE Electron. Device Lett., Vol. 10, (1989), pp. 577-579
26. J. Wurfl, B. Janke, H.H. Rooch, S. Thierbach, "GaAs Microwave Devices Operating at High Ambient Temperatures: Technology and Performance", Proceedings 2nd International High Temperature Electronics Conference, Charlotte, NC, (1994), V33-V38
27. Bottner, K. Fricke, A. Goldhorn, H.L. Hartnagel, A. Rappl, S. Ritter, J. Wurfl, "Technology and Performance of a High Temperature Stable (up to 300C) Operational Amplifier on GaAs." Proceedings 1st International High Temperature Electronics Conference Albuquerque NM., (1991), pp. 77-82
28. P. Baureis, J. Gerber, B. Janke, J. Wurfl, "Operational amplifier design using GaAs MESFET for temperature applications up to 350C", Proceedings 3rd International High Temperature Electronics Conference Albuquerque NM., (1996), pp. IV3-IV8
29. R. Lee, G. Tombley, B. Johnson, R. Reston, M. Mah, C. Havasy and C. Ito, "High temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer", IEEE Electron Device Letters, Vol. 16, No. 6 (1995), pp. 265-267
30. S. Baier, J. Nohava, R. Peter, R. Carlson, S. Hanka, "High Temperature Electronics using Complementary Heterostructure FET (CHFET) Technology", Proceedings 2nd International High Temperature Electronics Conference, Charlotte, A/C(1994), pp. V21-V26
31. C. Wilson, A.G. O'Neil, "A Complementary lll-V Heterostructure Field Effect Transistor Technology For High Temperature Integrated Circuits", Materials Science and Engineering, B29, (1995), pp. 54-57
32. CD. Wilson, A.G. O'Neil, S.M. Baier, J.C. Nohava, "High Temperature Performance and Operation of HFETs", IEEE Trans. Electr. Dev., Vol 43, No2, (1996), pp. 201206
33. N.A. Papanicolaou, W.T. Anderson, D.S. Katzer, S.H. Jones, J.R. Jones, "All-Refractory GaAs FET for High Temperature Applications", Proceedings 2nd International High Temperature Electronics Conference, Charlotte, NC, (1994), pp. V9-V14
34. K. Lipka, P. Schmid, J. Ibbetson, N. Nguyen, U. Mishra, E. Kohn, "High Temperature Operation of GaAs Based HFET Structure Containing Layers Grown at Low Temperature", Proceedings WOCSDICE, (1997), pp. 17-18
35. J.C. Zolper, V.M. Hietala, M.S. Housel, A.G. Baca, M.E. Sherwin, "Comparison of GaAs JFETs to MESFETs for High Temperature Operation", Proceedings 3rd International High Temperature Electronics Conference Albuquerque NM., (1996), pp. IV9-IV14
36. K. Fricke, H.L. Hartnagel, W.Y. Lee, J. Wiirfl, "AIGaAs GaAs HBT for High Temperature Application", IEEE Trans. Electr. Dev., Vol. 38, No. 9, (1992), pp. 19771981
37. K. Fricke, V. Krozer, M. SchuBler, "Comparison of MESFETs, HEMT and HBT Device Performance at High Temperature", Proceedings 3rd International High Temperature Electronics Conference Albuquerque NM., (1996), pp. IV15-IV21
38. D.E. Kren, A.A. Rezazadeh, J.N. Tothill, "Temperature Dependence of Current Gain in High C-Doped Base HBTs", Electronics Letters, Vol. 30, No. 10, (1994), pp. 825-826
39. E. Pettenpaul, W. Heidenreich, J. Huber, W. Floss-mann, "A High Temperature Sensor Based on Monolithic GaAs Hall IC", Proceedings IEEE GaAs IC Symposium, (1985), pp. 169-172
40. I. Itakura, "GaAs Integrated Hall Sensor with Temperature-Stabilised Characteristics up to 300C", Electronics Letters, Vol. 25, No. 22, (1989), pp. 1493-1495