A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures

IEEE Transactions on Power Electronics

Volumn 19, Issue 1, 2004, Pages 231-241

  Azzopardi, Stéphane ^a   Vinassa, Jean Michel ^a   Woirgard, Eric ^a   Zardini, Christian ^a   Briat, Olivier ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Conventional planar punchthrough IGBT; Devices performances; Enhanced planar punchthrough IGBT; Hard switching; High temperature; Local lifetime control; Soft switching; Trench punchthrough IGBT

Indexed keywords

CAPACITANCE; COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK TOPOLOGY; HIGH TEMPERATURE PROPERTIES; INDUCTANCE; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS;

GLOBAL LIFETIME CONTROL; LOCAL LIFETIME CONTROL; PUNCHTHROUGH INSULATED GATE BIPOLAR TRANSISTOR; SOFT SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0742269021     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2003.820580     Document Type: Article

References (22)

1. J. P. Russel, A. M. Goodman, L. A. Goodman, and J. M. Neilson, "The COMFET - a new high conductance MOS-gated device," IEEE Electron Devices Lett., vol. EL-4, pp. 63-65, Mar. 1983.
2. B. J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. Zommer, "The insulated gate transistor: a new three-terminal MOS controlled bipolar power device," IEEE Trans. Electron Devices, vol. ED-31, pp. 821-828, June 1984.
3. M. Trivedi and K. Shenai, "Tradeoff in IGBT safe operating area and performance parameters," in Proc. IEEE IAS, 1997, pp. 949-954.
4. B. J. Baliga, Power Semiconductor Devices. New York: PWS, 1996.
5. E. R. Motto, J. F. Donlon, H. Takahashi, M. Tabata, and H. Iwamoto, "Characteristics of a 1200 V PT IGBT with trench gate and local life time control," in Proc. IEEE IAS, 1998, pp. 811-816.
6. M. Trivedi and K. Shenai, "Evaluation of planar and trench IGBT for hard- and soft-switching performance," in Proc. IEEE IAS, 1999, pp. 717-721.
7. F. Udrea, S. S. M. Chan, J. Thomson, T. Trajkovic, P. R. Waind, G. A. J. Amaratunga, and D. E. Crees, "1.2 kV trench Insulated Gate Bipolar Transistors (IGBT's) with ultralow on-resistance," IEEE Electron Devices Lett., vol. EL-20, pp. 428-430, Aug. 1999.
8. F. Auerbach, J. G. Bauer, M. Hierholzer, L. Lorenz, A. Porst, H. Ruthing, and O. Schilling, "6.5 kV IGBT modules," in Proc. IPEC, vol. 1, 2000, pp. 275-279.
9. H. Iwamoto, H. Haruguchi, Y. Tomomatsu, J. F. Donlon, and E. R. Motto, "A new punchthrough IGBT having a new N-buffer layer," in Proc. IEEE IAS, 1999, pp. 692-699.
10. N. Ned Mohan, T. M. Tore M. Undeland, and W. P. William P. Robbins, Power Electronics: Converters, Applications, and Design. New York: Wiley, p. 824.
11. S. Azzopardi, C. Jamet, J. M. Vinassa, and C. Zardini, "Switching performances comparison of 1200 V punchthrough and non punchthrough IGBTs under hard-switching at high temperature," in Proc. IEEE PESC, 1998, pp. 1201-1207.
12. S. Azzopardi, A. Kawamura, and H. Iwamoto, "Characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load under extensive measurements without freewheeling diode reverse recovery influence," in Proc. IEEE CIEP, 2000, pp. 249-256.
13. ____, "Soft-switching performances of 1200 V new punchthrough IGBT using local lifetime control at high temperature," in Proc. IEEE PESC, 2001, pp. 606-611.
14. ____, "Soft-switching turn-off characterization at high temperature of 1200 V trench IGBT using local lifetime control," in Proc. IEEE ISPSD, 2001, pp. 319-322.
15. M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, and I. Takata, "600 V trench IGBT in comparison with planar IGBT - an evaluation of the limits of IGT performance," in Proc. IEEE ISPSD, 1994, pp. 411-416.
16. M. Saggio, V. Raineri, R. Letor, and F. Frisina, "Innovative localized lifetime control in high-speed IGBT," IEEE Electron Devices Lett., vol. EL-18, pp. 333-335, July 1997.
17. I. Widjaja, A. Kurnia, K. Shenai, and D. M. Divan, "Switching dynamics of IGBT's in soft-switching converters," IEEE Trans. Electron Devices, vol. ED-42, pp. 445-454, Mar. 1995.
18. S. Pendharkar and K. Shenai, "Zero-voltage switching behavior of punchthrough and non punchthrough IGBT," IEEE Trans. Electron Devices, vol. ED-45, pp. 1826-1835, Aug. 1998.
19. M. Trivedi and K. Shenai, "Internal dynamics of IGBT under zero-voltage and zero-current switching conditions," IEEE Trans. Electron Devices, vol. ED-46, pp. 1274-1282, May 1999.
20. A. Claudio, M. Cotorogea, J. Aguayo, and L. G. Vela, "Experimental and simulation of the PT-IGBT under ZCS operation in a special test circuit," in Proc. COBEP, 1999, pp. 56-61.
21. A. Consoli, C. Licitra, S. Musumeci, and A. Testa, "Comparative investigation on power losses in soft-switching insulated gate device," in Proc. ISPSD, 1994, pp. 28-33.
22. A. Elasser, V. Parthasarathy, and D. A. Torrey, "A study of the internal device dynamics of punchthrough and non punchthrough IGBT's under zero-current switching," IEEE Trans. Power Electron., vol. EP-12, pp. 21-35, Jan. 1997.