600V trench IGBT in comparison with planar IGBT - an evaluation of the limit of IGBT performance -

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 411-416

  Harada, M ^a   Minato, T ^a   Takahashi, H ^a   Nishihara, H ^a   Inoue, K ^a   Takata, I ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRODES; FABRICATION; MICROPROCESSOR CHIPS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

EMITTER ELECTRODE; HIGHER VOLTAGE REGION; INSULATED GATE BIPOLAR TRANSISTORS; WAFER SUBSTRATE STRUCTURE;

BIPOLAR TRANSISTORS;

EID: 0028706647     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)