Switching performances comparison of 1200 V punch-through and non punch-through IGBTs under hard-switching at high temperature

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1998, Pages 1201-1207

  Azzopardi, S ^a   Jamet, C ^a   Vinassa, J M ^a   Zardini, C ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

ELECTRIC LOSSES; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HIGH TEMPERATURE TESTING; SWITCHING;

BIPOLAR TRANSISTORS;

EID: 0031638459     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. A. Elasser, M.J. Schutten, V. Vlatkovic, D.A. Torrey "A Study of The Internal Device Dynamics of Punch-Through and Non Punch-Through IGBTs Under Zero-Current Switching", IEEE Transactions on Power Electronics, vol.12, no. 1, January 1997, pp. 21-35
3. M. Trivedi, K. Shenai "Modelling the Tum-Oflf of IGBT's in Hard-and Soft-Switching Applications", IEEE Transactions on Electron Devices, vol. 44, no. 5, May 1997, pp. 887-893
4. K. Wang, F.C. Lee, G. Hua, D. Borojevic "A Comparative Study of Switching Losses of IGBTs under Hard-Switching, Zero-Voltage-Switching and Zero-Current-Switching", IEEE PESC Conf. Proc. 1994, pp. 1196-1204
5. M. Cotorogea, T. Reimann, S. Bernet "The Behaviour of Homogeneous NPT-IGBTs at Hard and Soft Switching", EPE Journal, vol. 5, no. 3/4, January 1996, pp. 23-31
6. S. Azzopardi, C. Jamet, J.-M. Vinassa, C. Zardini "Dynamics Behavior of Punch-Through IGBT in Hard-Switching Converters at High Temperature", European Power Electronics Proc. Conf. 1997, vol. 4, pp. 1-6
7. International Rectifier, 1994, "IGBT Designer's Manual"
8. G. E.P. Fox, W.G. Hunter, J.S. Hunter "Statistics for Experimenters: an Introduction to Design, Data Analysis, and Model Building", John Wiley and Sons, 1978.