A study of the internal device dynamics of punch-through and nonpunch-through IGBT's under zero-current switching

IEEE Transactions on Power Electronics

Volumn 12, Issue 1, 1997, Pages 21-35

  Elasser, Ahmed ^a,b   Parthasarathy, Vijay ^c   Torrey, David A ^a,d  

^a IEEE   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

^c MOTOROLA INC   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; OPTIMIZATION; PERFORMANCE; POWER ELECTRONICS; PRODUCT DESIGN; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING;

INTERNAL DEVICE DYNAMICS; NONPUNCH THROUGH; PUNCH THROUGH; SNUBBER ELEMENTS; ZERO CURRENT SWITCHING; ZERO VOLTAGE SWITCHING;

BIPOLAR TRANSISTORS;

EID: 0030865485     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.554166     Document Type: Article

References (14)

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