Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's)

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1826-1835

  Pendharkar, Sameer ^a   Shenai, Krishna ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; FINITE ELEMENT METHOD; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING; TEMPERATURE; WAVEFORM ANALYSIS;

CONDUCTIVITY MODULATION LAG; INSULATED GATE BIPOLAR TRANSISTORS; NONPUNCHTHROUGH DEVICES; PUNCHTHROUGH DEVICES; ZERO VOLTAGE SWITCHING;

BIPOLAR TRANSISTORS;

EID: 0032141248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704385     Document Type: Article

References (25)

1. M. Carpita, P. Farina, and S. Tenconi, Single phase sliding mode controlled inverter with three level output voltage for UPS or power conditioning applications, Control in Power Electronics IEE Conf. Publ.. 1993, vol. 4, no. 377, pp. 272-277.
2. M. A. E. Andersen, Comparison of three IGBT inverters, one hardswitched and two with snubber circuits using a minimum number of components, Materials and Devices IEE Conf. Publ., 1993, vol. 2, no. 377, pp. 306-311.
3. J. P. Rüssel et al., The COMFET-A new high conductance MOS gated device, IEEE Electron Device Lett., vol. EDL-4, 1983.
4. B. J. Baliga et al., The insulated-gate transistor: A new three-terminal MOS-controlled bipolar power device, IEEE Trans. Electron Devices, vol. ED-31, pp. 821-828, June 1984.
5. H. Yilmaz et al., Insulated gate transistor modeling and optimization,in IEDM Tech. Dig., 1984, p. 274.
6. A. R. Hefner and D. L. Blackburn, An analytical model for the steadystate and transient characteristics of the power insulated gate bipolar transistor, Solid-State Electron., vol. 31, pp. 1513-1532, 1988.
7. A. R. Hefner, An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT), in Conf. Rec. IEEE Power Electronics Specialists, 1989, p. 303.
8. Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT), Conf. Rec. IEEE IndustryApplications Soc. Ann. Meeting, 1989, p. 1227.
9. K. Sakurai et al., 600 V and 1200 V MOS-gate bipolar transistor (MBT) module for high-frequency PWM inverter, in P roc. PC/M, Dec. 1988, pp. 134-141.
10. E. R. Motto étal., New process technologies improve IGBT module efficiency, Conf. Rec. 1995 IEEE-IAS 30th Anna. Meeting, IEEE Cat. #95CH35862, Oct. 1995, vol. 2, pp. 991-996.
11. M. Mori, Y. Nakano, and T. Tanaka, An insulated gate bipolar transistor with a self-aligned DMOS structure, IEDM Tech. Dig., 1988, pp. 813-816.
12. H. Akiyama et al., A collector shorted type insulated gate bipolar transistor, in Proc. PCIM, Tokyo, Dec. 1988, pp. 142-151.
13. G. Miller and J. Sack, A new concept for a nonpunchthrough IGBT with MOSFET like switching characteristics, Conf. Rec. IEEE Power Electronics Specialists Conf., 1989, pp. 21-25.
14. M. Otsuki, The 3rd generation IGBT toward a limitation of IGBT performance, in Proc. of 5th ISPSD and 1C's Meeting, 1993, pp. 24-29.
15. H. Yilmaz et al., Comparison of the punchthrough and nonpunchthrough insulated gate transistor structures, Conf. Rec. IEEE Industry Applicat. Soc. Ann. Meeting, 1985, pp. 905-908.
16. T. Laska, G. Miller, and J. Niedermeyer, 2000 V nonpunchthrough IGBT with high ruggedness, Solid State Electron., vol. 35, no. 5, pp. 681-685, May 1992.
17. D. M. Divan, The resonant link converter-A new concept in static power conversion, Conf. Rec. IEEE Industry Applicat. Soc. Annu. Meeting, 1986, pp. 648-656.
18. G. Venkataramanan and D. M. Divan, Comparative evaluation of softswitching inverters, EPE Conf. Rec., P0:013-2:019, 1991.
19. ATLAS Users Manual, Silvaco International, Santa Clara, CA.
20. MIXED MODE Users Manual, Silvaco International, Santa Clara, CA.
21. T. Tsunoda et al., Improved 600 and 1200 V IGBT with low turnoff loss and high ruggedness, in Conf. Rec. IEEE Power Electronics Specialists., 1990, pp. 9-16.
22. S. Pendharkar and K. Shenai, A critique of the turn-on physics of power bipolar devices, in Proc. 1995 IEEE Bipolar/BiCMOS Circuits and Technologies Meeting (BCTM), IEEE Cat. 95CH35831, Oct. 1995, pp. 205-208.
23. I. Widjaja et al., Computer simulation and design optimization of IGBT's in soft-switching converters, in Proc. 6th IEEE ISPSD and IC's Meet., 1994, pp. 105-109.
24. R. H. Dean, Transient double injection in trap-free semiconductors, J. Appl. Phy., vol. 40. no. 2, pp. 595-595, Feb. 1969.
25. Transient double injection in semiconductor with traps, J. Appl. Phy., vol. 40, no. 2, pp. 596-602, Feb. 1969.