Characteristics of a 1200 V PT IGBT with trench gate and local life time control

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 1998, Pages 811-816

  Motto, Eric R ^a   Donlon, John F ^a   Takahashi, H ^a   Tabata, M ^a   Iwamoto, H ^a  

^a POWEREX INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PUNCH-THROUGH (PT) STRUCTURE; TRENCH GATES;

BIPOLAR TRANSISTORS;

EID: 0032307390     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)