Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

Microelectronics Journal

Volumn 35, Issue 3, 2004, Pages 291-297

  Roig, J ^a   Flores, D ^a   Hidalgo, S ^a   Rebollo, J ^a   Millan, J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

LDMOS; Power amplifier; RF; Silicon on insulator; Silicon on sapphire

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRYSTALLOGRAPHY; HEAT RESISTANCE; IONIZATION; LEAKAGE CURRENTS; MOS DEVICES; NUMERICAL METHODS; POWER AMPLIFIERS; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; TRANSISTORS;

IONIZATION CURRENTS; LDMOS; POWER DISSIPATION;

SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0742268510     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00187-3     Document Type: Conference Paper

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