Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1711-1715

  Hefyene, Nasser ^a   Cristoloveanu, Sorin ^a   Ghibaudo, Gérard ^a   Gentil, Pierre ^a   Moriyasu, Yoshitaka ^b   Morishita, Takashi ^b   Matsui, Masahiro ^b   Yasujima, Akitaka ^b  

^a Grenoble INP Phelma   (France)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; INTERFACES (MATERIALS); SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; TRANSPORT PROPERTIES;

SILICON-ON-SAPPHIRE FILMS;

MOSFET DEVICES;

EID: 0034292311     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00144-1     Document Type: Article

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