RF power LDMOSFET on SOI

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 139-141

  Fiorenza, James G ^a,b   Antoniadis, Dimitri A ^a,b   Del Alamo, Jesús A ^a,b  

^a IEEE   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

LDMOSFET; RF CMOS; RF SOI

Indexed keywords

LATERALLY DIFFUSED MOSFET; RADIO FREQUENCY POWER AMPLIFIERS;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; WIRELESS TELECOMMUNICATION SYSTEMS;

MOSFET DEVICES;

EID: 0035279935     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910622     Document Type: Article

References (13)

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3. A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications
4. Power amplifiers on thin-film-silicon-on-insulator (TFSOI) technology
5. t of 6.9 GHz
6. A 900 MHz SOI fully-integrated RF power amplifier for wireless transceivers
7. A 0.22 μm CMOS-SOI technology with a Cu BEOL
8. Comparative study of fully depleted and body grounded non fully depleted SOI MOSFET's for high performance analog and mixed signal circuits
9. The effect of body contact arrangement on thin SOI MOSFET characteristics
10. High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V
11. High performance scaled down Si LDMOSFET with thin gate bird's beak technology for RF power amplifiers
12. A high frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V
13. Highly efficient 1.5 GHz Si power MOSFET for digital cellular front end