Analysis of the breakdown voltage in SOI and SOS technologies

Solid-State Electronics

Volumn 46, Issue 2, 2002, Pages 255-261

  Roig, J ^a   Vellvehi, M ^a   Flores, D ^a   Rebollo, J ^a   Millan, J ^a   Krishnan, S ^b   De Souza, M M ^b   Sankara Narayanan, E M ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Buried oxide layer; Lateral power devices; Silicon on insulator; Silicon on sapphire; Variation lateral doping

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INSULATORS; MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON ON SAPPHIRE TECHNOLOGY; ULTRATHIN FILMS;

POWER DEVICES; ULTRATHIN INSULATOR LAYERS;

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0036467044     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00265-9     Document Type: Article

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