Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI devices

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 251-253

  Tenbroek, Bernard M ^a,b   John, R ^a   Bunyan, T ^a   Whiting, Gary ^a   Redman White, William ^a   Uren, Michael J ^a,b   Brunson, Kevin M ^a   Lee, Michael S L ^a   Edwards, Christopher F ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT RESISTANCE; MOSFET DEVICES; OXIDATION; OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL CONDUCTIVITY OF SOLIDS; THERMOANALYSIS;

BURIED OXIDE THERMAL CONDUCTIVITY MEASUREMENT; ELECTROTHERMAL SIMULATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032740062     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737466     Document Type: Article

References (10)

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