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Volumn 21, Issue 4, 2001, Pages 515-525

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

(11) Misiuk, A a Bak Misiuk, J b Antonova, I V c Raineri, V d Romano Rodriguez, A e Bachrouri, A e Surma, H B a Ratajczak, J a Katcki, J a Adamczewska, J b Neustroev, E P c

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b INSTITUTE OF PHYSICS (Poland)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

d CNR IMETEM (Italy)

e UNIVERSITY OF BARCELONA (Spain)

Author keywords

Defects; Helium; Hydrogen; Hydrostatic pressure; Implantation; Oxygen; Silicon; Stress

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION; DISLOCATIONS (CRYSTALS); HELIUM; HYDROGEN; OXYGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRESS ANALYSIS; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THERMAL DONORS (TD);

ION IMPLANTATION;

EID: 0034892512 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(01)00200-2 Document Type: Article

Times cited : (16)

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