Transmission electron microscopy investigation of oxygen precipitation in Czochralski silicon annealed under high pressure

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 84-87

  Xu, Jin ^a   Yang, Deren ^a   Li, Chunlong ^a   Ma, Xiangyang ^a   Que, Duanlin ^a   Misiuk, A ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

High pressure; Oxygen precipitation; Silicon; TEM

Indexed keywords

CRYSTAL GROWTH FROM MELT; OXYGEN; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN PRECIPITATION;

SILICON;

EID: 0042513576     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00634-7     Document Type: Conference Paper

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