Dependence of photoluminescence of silicon on conditions of pressure-annealing

Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 258-264

  Misiuk, Andrzej ^a   Surma, Hańcza B ^a   Jun, Jan ^a,b   Ba̧k Misiuk, Jadwiga ^c   Domagała, Jarosław ^c   Antonova, Irina V ^d   Popov, Vladimir P ^d   Romano Rodriguez, Albert ^e   Lopez, Manuel ^e  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^e UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; PHOTOLUMINESCENCE; STRESS ANALYSIS; X RAY SCATTERING;

X RAY DIFFUSE SCATTERING INTENSITY;

SEMICONDUCTING SILICON;

EID: 0032606798     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)01017-2     Document Type: Article

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