Hexamethyldisilane/propane versus silane/propane precursors: Application to the growth of high-quality 3C-SiC on Si

Semiconductor Science and Technology

Volumn 18, Issue 12, 2003, Pages 1015-1023

  Ferro, G ^a   Camassel, J ^b   Juillaguet, S ^b   Balloud, C ^b   Polychroniadis, E K ^c   Stoemenos, Y ^c   Dazord, J ^a   Peyre, H ^b   Monteil, Y ^a   Rushworth, S A ^d   Smith, L M ^d  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^d Epichem Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; PROPANE; SEMICONDUCTING SILICON; SILANES;

ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION; HEXAMETHYLDISILANE; SILANE-PROPANE PRECURSOR SYSTEMS;

SILICON CARBIDE;

EID: 0348217892     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/12/303     Document Type: Article

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