Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films

Thin Solid Films

Volumn 446, Issue 1, 2004, Pages 23-28

  Sahu, B S ^a   Srivastava, P ^a   Agnihotri, O P ^a,b   Lee, H C ^b   Sekhar, B R ^c   Mahapatra, S ^c   Tiwari, M K ^d  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c INSTITUTE OF PHYSICS   (India)

^d RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Energy dispersive X ray fluorescence; Fourier transform infrared; Photo CVD; Silicon nitride; X Ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRONIC DENSITY OF STATES; ENERGY DISPERSIVE SPECTROSCOPY; FLUORESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MERCURY (METAL); MOS DEVICES; PRESSURE EFFECTS; SILICON NITRIDE; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC BOMBARDMENT; FIXED INSULATING CHARGES; SURFACE DEFECTS; TUNNELING CURRENTS;

THIN FILMS;

EID: 0348042915     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01320-8     Document Type: Article

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