Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides

Microelectronics Reliability

Volumn 44, Issue 1, 2004, Pages 65-77

  Bravaix, A ^a   Goguenheim, D ^a   Revil, N ^b   Vincent, E ^b  

^a Maison des Technologies   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC CHARGE; ELECTRON TUNNELING; GATES (TRANSISTOR); HOLE TRAPS; HOT CARRIERS; IMPACT IONIZATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS;

DRAIN CURRENT MEASUREMENT; ELECTRONIC STRESSES; HOT TUNNELING CURRENTS; VALENCE BAND;

MOSFET DEVICES;

EID: 0347412070     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.10.002     Document Type: Article

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