High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 469-471

  Ang, D S ^a   Phua, T W H ^b   Liao, H ^a,c   Ling, C H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Charge pumping current; High energy tail; Hot carrier stress; Interface states; N MOSFET

Indexed keywords

CARRIER MOBILITY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRON DENSITY MEASUREMENT; MOSFET DEVICES; VOLTAGE MEASUREMENT;

CHARGE PUMPING CURRENT; DEEP SUBMICROMETER TRANSISTORS; GATE STRESS VOLTAGE; HIGH ENERGY TAIL ELECTRONS; HOT CARRIER STRESS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0041385791     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814011     Document Type: Letter

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