Hot-carrier reliability in n-MOSFET's used as pass-transistors

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 987-990

  Goguenheim, D ^a   Bravaix, A ^a   Vuillaume, D ^b   Varrot, M ^c   Revil, N ^c   Mortini, P ^c  

^a Maison des Technologies   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIER RELIABILITY; NMOSFET; PASS-TRANSISTORS;

EID: 0347780075     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. W. Weber et al, IEEE Trans. Electron Devices, N° 38, p. 1859, 1991.
2. K. Mistry et al, IEEE Trans. Electron Devices, N° 1, p. 96, 1993.
3. K.N. Quader et al, IEEE Trans. Electron Devices, N° 5, p. 681, 1994.
4. R. Bellens et al, IEEE Trans. Electron Devices, N° 8, p. 1421, 1994.
5. D. Vuillaume et al, IEEE Trans. Electron Devices, N° 4, p. 773, 1993.