Injection mechanisms and lifetime prediction with the substrate voltage in 0.15μm channel-length N-MOSFETs

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1313-1318

  Bravaix, A ^a   Goguenheim, D ^a   Revil, N ^b   Vincent, E ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; EXTRAPOLATION; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; PROBABILITY; SUBSTRATES;

ELECTRONIC GATE CURRENTS;

MOSFET DEVICES;

EID: 0035456692     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00206-2     Document Type: Article

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