Three hundred-mm wafers: a technological and an economical challenge

Microelectronic Engineering

Volumn 45, Issue 2, 1999, Pages 183-190

  Dietrich, Holger ^a   Bergholz, Werner ^a   Dubbert, Steffi ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE MANUFACTURE;

CRYSTAL ORIGINATED PITS; CRYSTAL PULLING;

SILICON WAFERS;

EID: 0032590886     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00135-5     Document Type: Article

References (4)

1. Goodall R. Huff H., Gösele U., Tsuya H. Semiconductor Silicon 1998. 1998;1303 Electrochem. Society, Pennington, NJ.
2. Winkler R., Hanke W. Huff H., Gösele U., Tsuya H. Semiconductor Silicon 1998. 1998;1325 Electrochem. Society, Pennington, NJ.
3. A. v Zitzewitz, Markt Tech. 5 (28) (1998).
4. MEMC Press release on APEX material, April 13, 1998.